The Effect of Annealing Pressure on Perovskite Films and Its Thin-Film Field-Effect Transistors' Performance

被引：6

作者：

Zhou, Zhou ^{[1
]}

Guo, Ning ^{[1
]}

Peng, Yuze ^{[1
]}

Tang, Linlin ^{[1
]}

Zhang, Jianjun ^{[1
]}

Cai, Hongkun ^{[1
]}

Ni, Jian ^{[1
]}

Sun, Yanyan ^{[2
]}

Li, Juan ^{[1
]}

机构：

[1] Nankai Univ, Inst Photoelect, Tianjin Key Lab Opt Elect Thin Film Devices & Tec, Tianjin 300071, Peoples R China

[2] Tianjin Third Cent Hosp Tianjin, Dept Gynecol, Tianjin 300170, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2019年 / 216卷 / 22期

基金：

中国国家自然科学基金;

关键词：

annealing pressure; organic-inorganic hybrid perovskites; thin-film transistors; HALIDE PEROVSKITES; SOLAR-CELLS; LIGHT; MOBILITIES; CRYSTALLIZATION; EFFICIENCY; KINETICS;

D O I：

10.1002/pssa.201900434

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of annealing pressure on the properties of organic-inorganic hybrid perovskite is investigated. A novel and facile low-pressure annealing strategy is proposed to obtain high-quality perovskite films with full coverage, micrometer-sized grains, and small roughness. Herein, it is found that a low-pressure annealing environment is favorable for the volatilization of the residual solvent in the initial film to further improve the nucleation rate of the perovskite. The grain size has a great correlation with the annealing pressure and time. As a result, the thin-film field-effect transistors fabricated by this optimized film exhibit a relatively high field-effect mobility of 1.8 x 10(-2) cm(2) Vs(-1). Herein, it is significant that fabricating high-quality perovskite films by the solution process in air is made possible.

引用

页数：7

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