High pressure studies of mid-infrared type-II "W" diode lasers at cryogenic temperatures

被引：3
|
作者：
O'Brien, K. [1 ]
Adams, A. R.
Sweeney, S. J.
Jin, S. R.
Ahmad, C. N.
Murdin, B. N.
Canedy, C. L.
Vurgaftman, I.
Meyer, J. R.
机构：
[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
[2] USN, Res Lab, Washington, DC 20375 USA
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 01期
关键词：
D O I：
10.1002/pssb.200672591
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Using high hydrostatic pressure and spontaneous emission characterisation techniques we have investigated the important loss processes in type-II "W" diode lasers, which emit at 3.24 mu m at 78 K. Our studies indicate that Auger recombination involving the excitation of holes in the valence band and/or inter-valence-band absorption may contribute to the temperature sensitivity of these devices, even at cryogenic temperatures. Defect/impurity related recombination, which was of concern in these structures does not appear to make a significant contribution to the threshold current over the temperature and pressure ranges investigated.
引用
收藏
页码：224 / 228
页数：5
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