High pressure studies of mid-infrared type-II "W" diode lasers at cryogenic temperatures

被引：3

作者：

O'Brien, K. ^{[1
]}

Adams, A. R.

Sweeney, S. J.

Jin, S. R.

Ahmad, C. N.

Murdin, B. N.

Canedy, C. L.

Vurgaftman, I.

Meyer, J. R.

机构：

[1] Univ Surrey, Adv Technol Inst, Guildford GU2 7XH, Surrey, England

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 01期

关键词：

D O I：

10.1002/pssb.200672591

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using high hydrostatic pressure and spontaneous emission characterisation techniques we have investigated the important loss processes in type-II "W" diode lasers, which emit at 3.24 mu m at 78 K. Our studies indicate that Auger recombination involving the excitation of holes in the valence band and/or inter-valence-band absorption may contribute to the temperature sensitivity of these devices, even at cryogenic temperatures. Defect/impurity related recombination, which was of concern in these structures does not appear to make a significant contribution to the threshold current over the temperature and pressure ranges investigated.

引用

页码：224 / 228

页数：5

共 50 条

[31] Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb
Sifferman, Scott D.
Nair, Hari P.
Salas, Rodolfo
Sheehan, Nathanial T.
Maddox, Scott J.
Crook, Adam M.
Bank, Seth R.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2015, 21 (06)
[32] Type-I InSb-based mid-infrared diode lasers
Ashley, T
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2001, 359 (1780): : 475 - 488
[33] AN OPTICAL ISOLATOR FOR MID-INFRARED DIODE-LASERS
CARLISLE, CB
COOPER, DE
OPTICS COMMUNICATIONS, 1989, 74 (3-4) : 207 - 210
[34] Sb-based mid-infrared diode lasers
Mermelstein, C
Rattunde, A
Schmitz, J
Simanowski, S
Kiefer, R
Walther, M
Wagner, J
PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 2002, 692 : 365 - 376
[35] Advances in mid-IR antimonide type-II W lasers
Bewley, WW
Felix, CL
Vurgaftman, I
Bartolo, RE
Lindle, JR
Canedy, CL
Meyer, JR
Turner, GW
Manfra, MJ
Lee, H
Martinelli, RU
2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 504 - 507
[36] HIGH PRESSURE MID-INFRARED STUDIES OF CALCIUM CARBONATE
CIFRULAK, SD
AMERICAN MINERALOGIST, 1970, 55 (5-6) : 815 - &
[37] Mid-infrared photodetectors based on InAs/InGaSb type-II superlattices
Lin, CH
Brown, GJ
Mitchel, WC
Ahoujja, M
Szmulowicz, F
PHOTODETECTORS: MATERIALS AND DEVICES III, 1998, 3287 : 22 - 29
[38] High-power continuous-wave midinfrared type-II "W" diode lasers
Canedy, CL
Bewley, WW
Lindle, JR
Vurgaftman, I
Kim, CS
Kim, M
Meyer, JR
APPLIED PHYSICS LETTERS, 2005, 86 (21) : 1 - 3
[39] Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers
Hoffmann, G
Schimper, HJ
Schwender, C
Herhammer, N
West, GF
Vogelgesang, B
Drumm, JO
Fouckhardt, H
Scheib, M
JOURNAL OF CRYSTAL GROWTH, 2003, 257 (1-2) : 42 - 50
[40] Development of dilute nitride materials for mid-infrared diode lasers
Krier, A.
de la Mare, M.
Carrington, P. J.
Thompson, M.
Zhuang, Q.
Patane, A.
Kudrawiec, R.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (09)

← 1 2 3 4 5 →