Explanation of an unexpected occurrence of ν = ±1/2 fractional quantum Hall effect states in monolayer graphene

被引：9
|
作者：
Jacak, Janusz E. [1 ]
机构：
[1] Wroclaw Univ Sci & Technol, Dept Quantum Technol, Wyb Wyspianskiego 27, PL-50370 Wroclaw, Poland
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2019年 / 31卷 / 47期
关键词：
monolayer graphene; fractional quantum Hall effect (FQHE); even denominator filling rate; beyond composite fermions;
D O I：
10.1088/1361-648X/ab3998
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Recent experiment reveals the appearance of incompressible fractional quantum Ilan effect states in monolayer graphene at nu = +/- 1/2 and +/- 1/4,+/- 3/4 substituting the compressible Hall metal states at these fillings in the lowest Landau level in a narrow magnetic field window depending on the sample parameters. Simultaneously, none such behavior has been observed either for nu = +/- 3/2 or +/- 5/4, +/- 7/4. We propose an explanation of these observations in terms of homotopy of monolayer graphene in consistence with a general theory of correlated states in planar Hall systems.
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收藏
页数：9
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