monolayer graphene;
fractional quantum Hall effect (FQHE);
even denominator filling rate;
beyond composite fermions;
D O I:
10.1088/1361-648X/ab3998
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
Recent experiment reveals the appearance of incompressible fractional quantum Ilan effect states in monolayer graphene at nu = +/- 1/2 and +/- 1/4,+/- 3/4 substituting the compressible Hall metal states at these fillings in the lowest Landau level in a narrow magnetic field window depending on the sample parameters. Simultaneously, none such behavior has been observed either for nu = +/- 3/2 or +/- 5/4, +/- 7/4. We propose an explanation of these observations in terms of homotopy of monolayer graphene in consistence with a general theory of correlated states in planar Hall systems.
机构:
Univ Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France
Inst Phys, Belgrade 11080, SerbiaUniv Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France
Papic, Z.
Goerbig, M. O.
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机构:
Univ Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, FranceUniv Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France
Goerbig, M. O.
Regnault, N.
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机构:
Ecole Normale Super, CNRS, Lab Pierre Aigrain, F-75005 Paris, FranceUniv Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France