Explanation of an unexpected occurrence of ν = ±1/2 fractional quantum Hall effect states in monolayer graphene

被引:9
|
作者
Jacak, Janusz E. [1 ]
机构
[1] Wroclaw Univ Sci & Technol, Dept Quantum Technol, Wyb Wyspianskiego 27, PL-50370 Wroclaw, Poland
关键词
monolayer graphene; fractional quantum Hall effect (FQHE); even denominator filling rate; beyond composite fermions;
D O I
10.1088/1361-648X/ab3998
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Recent experiment reveals the appearance of incompressible fractional quantum Ilan effect states in monolayer graphene at nu = +/- 1/2 and +/- 1/4,+/- 3/4 substituting the compressible Hall metal states at these fillings in the lowest Landau level in a narrow magnetic field window depending on the sample parameters. Simultaneously, none such behavior has been observed either for nu = +/- 3/2 or +/- 5/4, +/- 7/4. We propose an explanation of these observations in terms of homotopy of monolayer graphene in consistence with a general theory of correlated states in planar Hall systems.
引用
收藏
页数:9
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