Low-Power Double-Gate ZnO TFT Active Rectifier

被引：10

作者：

Sun, Kaige G. ^{[1
]}

Choi, Kyusun ^{[2
]}

Jackson, Thomas N. ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, Mat Res Inst, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Comp Sci & Engn, University Pk, PA 16802 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 04期

基金：

美国国家科学基金会;

关键词：

Active rectifier; thin film transistors; TFT; double gate; plasma-enhanced atomic layer deposition; zinc oxide; ZnO TFTs; oxide TFTs; oxide semiconductor transistors; energy harvesting; ENERGY;

D O I：

10.1109/LED.2016.2527832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a low-power full-wave active rectifier using double-gate ZnO thin-film transistors (TFTs). The active rectifier is designed to operate at low voltage and low power to allow integration with mechanical energy harvesters. Double-gate TFTs allow the TFT threshold voltage to be tuned and enable enhancement/depletion-mode circuits with high gain and low power consumption. The active rectifier is designed to work with input voltage as small as 200-mV peak-to-peak and frequencies up to 4 Hz. The active rectifier circuit includes 12 TFTs and operates with a power consumption <150 nW. The low fabrication temperature for the active rectifier circuit allows direct and distributed integration with micro-electromechanical energy harvesters.

引用

页码：426 / 428

页数：3

共 50 条

[31] Analytical Modeling and Simulation of a Triple-Material Double-Gate SON TFET with Stacked Front-Gate Oxide for Low-Power Applications
Kaveh Eyvazi
Mohammad Azim Karami
Iranian Journal of Science and Technology, Transactions of Electrical Engineering, 2023, 47 : 845 - 858
[32] Low-Voltage Double-Gate ZnO Thin-Film Transistor Circuits
Li, Yuanyuan V.
Ramirez, Jose Israel
Sun, Kaige G.
Jackson, Thomas N.
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (07) : 891 - 893
[33] Low-power design technique with ambipolar double gate devices
Jabeur, Kotb
O'Connor, Ian
Navarro, David
Le Beux, Sebastien
PROCEEDINGS OF THE 2012 IEEE/ACM INTERNATIONAL SYMPOSIUM ON NANOSCALE ARCHITECTURES (NANOARCH), 2012, : 14 - 21
[34] A new polysilicon CMOS self-aligned double-gate TFT technology
Xiong, ZB
Liu, HT
Zhu, CX
Sin, JKO
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (12) : 2629 - 2633
[35] Ultra-Low Power Circuit Design using Double-Gate FinFETs
Tejashwini, G. Devi
Raju, I. B. K.
Chary, Gnaneshwara
2014 2ND INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS), 2014,
[36] Influence of charge traps on charge plasma-germanium double-gate TFET for RF/Analog & low-power switching applications
Yadav, Ajeet K.
Malik, Sambhu P.
Baghel, Gaurav S.
Khosla, Robin
MICROELECTRONICS RELIABILITY, 2024, 153
[37] Design of Double-Gate Tri-Active Layer Channel Based IGZO Thin-Film Transistor for Improved Performance of Ultra-Low-Power RFID Rectifier
Dargar, Shashi K.
Srivastava, Viranjay M.
IEEE ACCESS, 2020, 8 : 194652 - 194662
[38] A Low-power Two-Stage Active Rectifier for Energy Harvesting Applications
Ferreira, Ana C. R.
Carvalho, Rui
Yang, Zhaochu
Correia, J. H.
Dong, Tao
2020 IEEE INTERNATIONAL SYMPOSIUM ON MEDICAL MEASUREMENTS AND APPLICATIONS (MEMEA), 2020,
[39] Bridge Rectifier with Cylindrical Surrounding Double-Gate MOSFET: A Model for Better Efficiency
Maduagwu, Uchechukwu A.
Srivastava, Viranjay M.
PROCEEDINGS OF THE 2017 TWENTY FIFTH INTERNATIONAL CONFERENCE ON THE DOMESTIC USE OF ENERGY (DUE), 2017, : 109 - 113
[40] Low-power high-performance asymmetrical double-gate circuits using back-gate-controlled wide-tunable-range diode voltage
Kim, Keunwoo
Chuang, Ching-Te
Kuang, Jente B.
Ngo, Hung C.
Nowka, Kevin J.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) : 2263 - 2268

← 1 2 3 4 5 →