Low-Power Double-Gate ZnO TFT Active Rectifier

被引：10

作者：

Sun, Kaige G. ^{[1
]}

Choi, Kyusun ^{[2
]}

Jackson, Thomas N. ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, Ctr Thin Film Devices, Mat Res Inst, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Comp Sci & Engn, University Pk, PA 16802 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 04期

基金：

美国国家科学基金会;

关键词：

Active rectifier; thin film transistors; TFT; double gate; plasma-enhanced atomic layer deposition; zinc oxide; ZnO TFTs; oxide TFTs; oxide semiconductor transistors; energy harvesting; ENERGY;

D O I：

10.1109/LED.2016.2527832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports a low-power full-wave active rectifier using double-gate ZnO thin-film transistors (TFTs). The active rectifier is designed to operate at low voltage and low power to allow integration with mechanical energy harvesters. Double-gate TFTs allow the TFT threshold voltage to be tuned and enable enhancement/depletion-mode circuits with high gain and low power consumption. The active rectifier is designed to work with input voltage as small as 200-mV peak-to-peak and frequencies up to 4 Hz. The active rectifier circuit includes 12 TFTs and operates with a power consumption <150 nW. The low fabrication temperature for the active rectifier circuit allows direct and distributed integration with micro-electromechanical energy harvesters.

引用

页码：426 / 428

页数：3

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