High quality 4H-SiC grown on various substrate orientations

被引：5

作者：

Henry, A ^{[1
]}

Ivanov, IG ^{[1
]}

Egilsson, T ^{[1
]}

Hallin, C ^{[1
]}

Ellison, A ^{[1
]}

Kordina, O ^{[1
]}

Lindefelt, U ^{[1
]}

Janzen, E ^{[1
]}

机构：

[1] ABB CORP RES, S-72178 VASTERAS, SWEDEN

来源：

关键词：

4H-SiC; c-axis; a-axis; photoluminescence;

D O I：

10.1016/S0925-9635(97)00105-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Growth of 4H epilayers has been achieved by chemical vapour deposition on various substrate orientations which were on-(0001) oriented, off axis (3.5 degrees- and 8 degrees-off towards the (11 (2) over bar 0) direction) and a-cut, both (11 (2) over bar 0) and (10 (1) over bar 0)-oriented material. Various characterisation techniques have been used to assess the epilayer quality such as optical microscopy, X-ray diffraction, and mainly photoluminescence spectroscopy. (C) 1997 Elsevier Science S.A.

引用

页码：1289 / 1292

页数：4

共 50 条

[41] As-grown 4H-SiC epilayers with magnetic properties
Syväjärvi, M
Stanciu, V
Izadifard, M
Chen, WM
Buyanova, IA
Svedlindh, P
Yakimova, R
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 747 - 750
[42] SIMS analysis of nitrided oxides grown on 4H-SiC
P. Tanner
S. Dimitrijev
H-F. Li
D. Sweatman
K. E. Prince
H. B. Harrison
Journal of Electronic Materials, 1999, 28 : 109 - 111
[43] High power 4H-SiC thyristors
Palmour, JW
Singh, R
Waltz, DG
1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST, 1996, : 54 - 55
[44] 4H-SiC high temperature spectrometers
Kalinina, E.
Strokan, N.
Ivanov, A. M.
Sadohin, A.
Azarov, A.
Kossov, V.
Yafaev, R.
Lashaev, S.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 941 - +
[45] High Mobility 4H-SiC MOSFET
O'Neill, A.
Arith, F.
Urresti, J.
Vasilevskiy, K.
Wright, N.
Olsen, S.
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 523 - 526
[46] CVD growth of 3C-SiC on 4H-SiC substrate
Henry, Anne
Li, Xun
Leone, Stefano
Kordina, Olof
Janzen, Erik
HETEROSIC & WASMPE 2011, 2012, 711 : 16 - 21
[47] High frequency 4H-SiC MOSFETS
Gudjonsson, G.
Allerstam, F.
Nilsson, P.-A.
Hjelmgren, H.
Sveinbjornsson, E. O.
Zirath, H.
Rodle, T.
Jos, R.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 795 - 798
[48] Growth of high-quality 4H-SiC epitaxial layers on 4° off-axis C-face 4H-SiC substrates
Zhao, Zhifei
Li, Yun
Xia, Xianjun
Wang, Yi
Zhou, Ping
Li, Zhonghui
JOURNAL OF CRYSTAL GROWTH, 2020, 531
[49] High quality 6H- and 4H-SiC pn structures with stable electric breakdown grown by liquid phase epitaxy
Rendakova, S
Ivantsov, V
Dmitriev, V
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 163 - 166
[50] High quality 6H- and 4H-SiC pn structures with stable electric breakdown grown by liquid phase epitaxy
Rendakova, S.
Ivantsov, V.
Dmitriev, V.
Materials Science Forum, 1998, 264-268 (pt 1): : 163 - 166

← 1 2 3 4 5 →