High quality 6H- and 4H-SiC pn structures with stable electric breakdown grown by liquid phase epitaxy

被引:0
|
作者
Rendakova, S. [1 ]
Ivantsov, V. [1 ]
Dmitriev, V. [1 ]
机构
[1] Russian Acad of Sciences, St. Petersburg, Russia
来源
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
8
引用
收藏
页码:163 / 166
相关论文
共 50 条
  • [1] High quality 6H- and 4H-SiC pn structures with stable electric breakdown grown by liquid phase epitaxy
    Rendakova, S
    Ivantsov, V
    Dmitriev, V
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 163 - 166
  • [2] Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy
    Rendakova, SV
    Nikitina, IP
    Tregubova, AS
    Dmitriev, VA
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 292 - 295
  • [3] Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy
    S. V. Rendakova
    I. P. Nikitina
    A. S. Tregubova
    V. A. Dmitriev
    Journal of Electronic Materials, 1998, 27 : 292 - 295
  • [4] 4H-SiC layers grown by liquid phase epitaxy on 4H-SiC off-axis substrates
    Kuznetsov, N
    Morozov, A
    Bauman, D
    Ivantsov, V
    Sukhoveev, V
    Nikitina, I
    Zubrilov, A
    Rendakova, S
    Dimitriev, VA
    Hofman, D
    Masri, P
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 229 - 232
  • [5] Step bunching in 6H- and 4H-SiC growth by step-controlled epitaxy
    Kimoto, T
    Itoh, A
    Matsunami, H
    SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 241 - 244
  • [6] Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy
    Kuznetsov, N
    Tsagaraki, K
    Bauman, D
    Morozov, A
    Nikitina, I
    Ivantsov, V
    Zekentes, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 345 - 347
  • [7] Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC
    Campi, J
    Shi, Y
    Luo, Y
    Yan, F
    Lee, YK
    Zhao, JH
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 849 - 852
  • [8] Growth of AlN on 6H- and 4H-SiC by gas-source molecular beam epitaxy
    Jarrendahl, K
    Smith, SA
    Zheleva, T
    Kern, RS
    Davis, RF
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1181 - 1184
  • [9] Growth of AlN on 6H- and 4H-SiC by gas-source molecular beam epitaxy
    Jarrendahl, K.
    Smith, S.A.
    Zheleva, T.
    Kern, R.S.
    Davis, R.F.
    Materials Science Forum, 1998, 264-268 (pt 2): : 1181 - 1184
  • [10] Proton irradiation induced defects in 6H- and 4H-SiC
    Puff, Werner
    Balogh, Adam G.
    Mascher, Peter
    Materials Research Society Symposium - Proceedings, 1999, 540 : 177 - 182