共 50 条
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- [3] Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy Journal of Electronic Materials, 1998, 27 : 292 - 295
- [4] 4H-SiC layers grown by liquid phase epitaxy on 4H-SiC off-axis substrates SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 229 - 232
- [5] Step bunching in 6H- and 4H-SiC growth by step-controlled epitaxy SILICON CARBIDE AND RELATED MATERIALS 1995, 1996, 142 : 241 - 244
- [6] Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 345 - 347
- [7] Effect of post-metal annealing on the quality of thermally grown silicon dioxide on 6H- and 4H-SiC SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 849 - 852
- [8] Growth of AlN on 6H- and 4H-SiC by gas-source molecular beam epitaxy SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1181 - 1184
- [9] Growth of AlN on 6H- and 4H-SiC by gas-source molecular beam epitaxy Materials Science Forum, 1998, 264-268 (pt 2): : 1181 - 1184
- [10] Proton irradiation induced defects in 6H- and 4H-SiC Materials Research Society Symposium - Proceedings, 1999, 540 : 177 - 182