High quality 6H- and 4H-SiC pn structures with stable electric breakdown grown by liquid phase epitaxy

被引：0
|
作者：
Rendakova, S. [1 ]
Ivantsov, V. [1 ]
Dmitriev, V. [1 ]
机构：
[1] Russian Acad of Sciences, St. Petersburg, Russia
来源：
Materials Science Forum | 1998年 / 264-268卷 / pt 1期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
8
引用
收藏
页码：163 / 166
相关论文
共 50 条
  • [31] Effect of anisotropic material properties on the forward voltage drop in 6H- and 4H-SiC power diode structures
    Tornblad, O
    Östling, M
    Lindefelt, U
    Breitholtz, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (02) : 125 - 129
  • [32] EPR study of proton implantation induced intrinsic defects in 6H- and 4H-SiC
    von Bardeleben, H.J., 2001, Trans Tech Publ, Uetikon-Zuerich (353-356)
  • [33] Impurity incorporation during sublimation bulk crystal growth of 6H- and 4H-SiC
    Ohtani, N
    Katsuno, M
    Takahashi, J
    Yashiro, H
    Kanaya, M
    Shinoyama, S
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 49 - 52
  • [34] Step bunching mechanism in chemical vapor deposition of 6H- and 4H-SiC{0001}
    Kimoto, T
    Itoh, A
    Matsunami, H
    Okano, T
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) : 3494 - 3500
  • [35] 6H-和4H-SiC功率VDMOS的比较与分析
    张娟
    柴常春
    杨银堂
    徐俊平
    半导体技术, 2008, (02) : 133 - 136
  • [36] Modelling of the tunnelling current in metal alloy contacts to 6H- and 4H-SiC substrates
    Rang, T
    MICROSIM II: SIMULATION AND DESIGN OF MICROSYSTEMS AND MICROSTRUCTURES, 1998, : 23 - 31
  • [37] Ballistic electron emission microscopy study of Schottky contacts on 6H- and 4H-SiC
    Im, HJ
    Kaczer, B
    Pelz, JP
    Choyke, WJ
    APPLIED PHYSICS LETTERS, 1998, 72 (07) : 839 - 841
  • [38] Room temperature initial oxidation of 6H- and 4H-SiC(0001) 3×3
    Amy, F.
    Hwu, Y.
    Brylinski, C.
    Soukiassian, P.
    Materials Science Forum, 2001, 353-356 : 215 - 218
  • [39] Deep levels in 4H-SiC layers grown by sublimation epitaxy
    Syväjärvi, M
    Yakimova, R
    Ciechonski, RR
    Kakanakova-Georgieva, A
    Storasta, L
    Janzén, E
    OPTICAL MATERIALS, 2003, 23 (1-2) : 61 - 64
  • [40] Effect of the Seed Polarity for High Quality 4H-SiC Crystal Grown on 6H-SiC Seed by PVT Method
    Yeo, Im-Gyu
    Lee, Tae-Woo
    Park, Jong-Hwi
    Yang, Woo-Sung
    Ryu, Heui-Bum
    Park, Mi-Seon
    Kim, Il-Soo
    Shin, Byoung-Chul
    Leet, Won-Jae
    Eun, Tai-Hee
    Lee, Seung-Seok
    Chun, Myong-Chuel
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 44 - +
12345