Growth of high quality poly-SiGe on glass substrates

被引：0
|
作者：
Shiota, K
Inoue, D
Minami, K
Yamamoto, M
Hanna, J
机构：
来源：
ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996 | 1997年 / 452卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si2H6 and GeF4. Deposition of the films was carried out at a low temperature of 450 degrees C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si2H6/GeF4) and the gas now rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). All these films show (220) preferential orientation. The mole fractions of Si in poly-SixGe1-x films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si0.95Ge0.05 films owing to the direct nucleation on the substrate surface.
引用
收藏
页码：1001 / 1006
页数：6
相关论文
共 50 条
  • [41] Mechanism of improved thermal stability of B in poly-SiGe gate on SiON
    Sadoh, T
    Fitrianto
    Kenjo, A
    Miyauchi, A
    Inoue, H
    Miyao, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B): : 2468 - 2471
  • [42] PECVD of poly-SiGe/Ge layers with increased total gas flow
    Wang, Qiang
    Goehlich, Andreas
    Russ, Marco
    Yang, Pin
    Vogt, Holger
    MICROELECTRONIC ENGINEERING, 2014, 115 : 26 - 31
  • [43] Design and characterization of a CMOS compatible poly-SiGe lowg capacitive accelerometer
    Wen, L.
    Haspeslagh, L.
    De Coster, J.
    Witvrouw, A.
    Puers, R.
    EUROSENSORS XXIV CONFERENCE, 2010, 5 : 742 - 745
  • [44] Enabling poly-SiGe MEMS scaling by improving anchor strength and resistance
    Van Hoof, R.
    Bryce, G.
    Claes, G.
    Witvrouw, A.
    Severi, S.
    MICROELECTRONIC ENGINEERING, 2011, 88 (08) : 2420 - 2423
  • [45] Successive segregation in laser-crystallized poly-SiGe thin films
    Weiman, M.
    Nickel, N. H.
    Sieber, I.
    Yan, B.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1259 - 1262
  • [46] Direct measurement of sidewall roughness on Si, poly-Si and poly-SiGe by AFM
    Gudmundsson, Valur
    Hellstrom, Per-Erik
    Zhang, Shi-Li
    Ostling, Mikael
    PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2008, 100
  • [47] Precision electrical trimming of very low TCR poly-SiGe resistors
    Babcock, JA
    Francis, P
    Bashir, R
    Kabir, AE
    Schroder, DK
    Lee, MSL
    Dhayagude, T
    Yindeepol, W
    Prasad, SJ
    Kalnitsky, A
    Thomas, ME
    Haggag, H
    Egan, K
    Bergemont, A
    Jansen, P
    IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) : 283 - 285
  • [48] Mechanism of improved thermal stability of B in poly-SiGe gate on SiON
    Department of Electronics, Kyushu University, Fukuoka 812-8581, Japan
    不详
    Sadoh, T. (sadoh@ed.kyushu-u.ac.jp), 1600, Japan Society of Applied Physics (41):
  • [49] With PECVD Deposited Poly-SiGe and Poly-Ge Forming Contacts Between MEMS and Electronics
    Wang, Qiang
    Vogt, Holger
    JOURNAL OF ELECTRONIC MATERIALS, 2019, 48 (11) : 7360 - 7365
  • [50] Mechanical characterization of poly-SiGe layers for CMOS-MEMS integrated application
    Modlinski, Robert
    Witvrouw, Ann
    Verbist, Agnes
    Puers, Robert
    De Wolf, Ingrid
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2010, 20 (01)
12345