Growth of high quality poly-SiGe on glass substrates

The composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si2H6 and GeF4. Deposition of the films was carried out at a low temperature of 450 degrees C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si2H6/GeF4) and the gas now rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). All these films show (220) preferential orientation. The mole fractions of Si in poly-SixGe1-x films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si0.95Ge0.05 films owing to the direct nucleation on the substrate surface.