Growth of high quality poly-SiGe on glass substrates

被引：0
|
作者：
Shiota, K
Inoue, D
Minami, K
Yamamoto, M
Hanna, J
机构：
来源：
ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996 | 1997年 / 452卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The composition variation and strutural properties of poly-SiGe thin films were investigated by Reactive Thermal CVD with Si2H6 and GeF4. Deposition of the films was carried out at a low temperature of 450 degrees C on oxidized silicon substrates using different growth parameters, i.e., the source gas flow ratio (Si2H6/GeF4) and the gas now rate. The structural profiles of as-deposited films were characterized by X-ray diffraction (XRD) and Raman scattering spectroscopies, scanning electron microscopy (SEM) and transmission electron microscopy (TEM). All these films show (220) preferential orientation. The mole fractions of Si in poly-SixGe1-x films were estimated to be from 0.95 to 0.05 for x by using Vegard's law for the XRD peaks. TEM observation revealed that high crystallinity was well established even in poly-Si0.95Ge0.05 films owing to the direct nucleation on the substrate surface.
引用
收藏
页码：1001 / 1006
页数：6
相关论文
共 50 条
  • [1] Direct nucleation and selective growth of nuclei for high crystallinity poly-SiGe thin films on SiO2 substrates
    Hanna, J
    Shiota, K
    Yamamoto, M
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998, 1998, 507 : 945 - 950
  • [2] Growth and characterization of Poly-SiGe prepared by reactive thermal CVD
    Zhang, JJ
    Shimizu, K
    Hanna, JI
    AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 : 377 - 382
  • [3] An Investigation of Stiction in Poly-SiGe Micromirror
    Ling, F. Z.
    De Coster, J.
    Beernaert, R.
    Witvrouw, A.
    Celis, J-P.
    De Wolf, I.
    2011 IEEE 61ST ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2011, : 157 - 162
  • [4] Laser crystallisation of poly-SiGe for microbolometers
    Chiussi, S
    Serra, C
    Serra, J
    González, P
    León, B
    Urban, S
    Andrä, G
    Bergmann, J
    Falk, F
    Fabbri, F
    Fornarini, L
    Martelli, S
    Rinaldi, F
    APPLIED SURFACE SCIENCE, 2002, 186 (1-4) : 166 - 172
  • [5] Poly-SiGe, a superb material for MEMS
    Witvrouw, A
    Gromova, M
    Mehta, A
    Sedky, S
    De Morr, P
    Baert, K
    van Hoof, C
    MICRO- AND NANOSYSTEMS, 2004, 782 : 25 - 36
  • [6] Thermal stability of B in poly-SiGe on SiON
    Sadoh, T
    Fitrianto
    Kunigami, M
    Kenjo, A
    Miyauchi, A
    Inoue, H
    Miyao, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 129 - 132
  • [7] Novel high growth rate processes for depositing poly-SiGe structural layers at CMOS compatible temperatures
    Mehta, A
    Gromova, M
    Rusu, C
    Olivier, R
    Baert, K
    Van Hoof, C
    Witvrouw, A
    MEMS 2004: 17TH IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 2004, : 721 - 724
  • [8] Poly-SiGe MEMS actuators for adaptive optics
    Lin, Blake C. -Y.
    King, Tsu-Jae
    Muller, Richard S.
    MEMS/MOEMS COMPONENTS AND THEIR APPLICATIONS III, 2006, 6113
  • [9] Aqueous transduction of poly-sige disk resonators
    Chandrahalim, Hengky
    Bhave, Sunil A.
    Quevy, Emmanuel P.
    Howe, Roger T.
    TRANSDUCERS '07 & EUROSENSORS XXI, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, 2007,
  • [10] An investigation of the static and dynamic characteristics of high speed SiGe:C HBTs using a poly-SiGe emitter
    Martinet, B
    Romagna, F
    Kermarrec, O
    Campidelli, Y
    Saguin, F
    Baudry, H
    Marty, M
    Dutartre, D
    Chantre, A
    PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2002, : 147 - 150
12345