Novel planar electrode structure for high-speed (>40 GHz) electroabsorption modulators

被引：3

作者：

Wang, Jian ^{[1
]}

Xiong, Bing ^{[1
]}

Cai, Peng-Fei ^{[1
]}

Tian, Jian-Bo ^{[1
]}

Sun, Chang-Zheng ^{[1
]}

Luo, Yi ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 42-45期

关键词：

electroabsorption modulators; inductively coupled plasma; dry etching;

D O I：

10.1143/JJAP.45.L1209

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel planar electrode structure has been developed for the fabrication of high-speed electroabsorption (EA) modulators. To reduce the modulator capacitance, a narrow high-mesa waveguide is fabricated by inductively coupled plasma (ICP) dry etching technique. A planarized electrode is then formed by inserting a thick SiO2 insulation mesa beneath the bonding pad, and photo-sensitive polymer is adopted to fill the trench between the ridge and the SiO2 mesa. The planarization procedure is carried out in a self-aligned way. The capacitance of fabricated EA modulators is estimated to be 0.12pF, and a modulation bandwidth over 40 GHz has been demonstrated.

引用

页码：L1209 / L1211

页数：3

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Novel planar electrode structure for high-speed (&gt;40 GHz) electroabsorption modulators

Novel planar electrode structure for high-speed (>40 GHz) electroabsorption modulators