Growth of GaN nanorods on (0001) sapphire substrates by hydride vapor phase epitaxy

GaN nanorods were grown on (0001) sapphire substrates by hydride vapor phase epitaxy (HVPE) through a self-assemble process. The nanorods were grown at high growth rate, with the c-axis maintained perpendicular to the substrate surface. The dependence of rod diameter and density on growth conditions was systematically investigated. The average diameter was minimized to 80-120 nm and the density of the GaN nanorods was 100x10(12) rods/m(2).