Growth of GaN nanorods on (0001) sapphire substrates by hydride vapor phase epitaxy

被引：0

作者：

Kim, HM ^{[1
]}

Kim, DS ^{[1
]}

Chang, YW ^{[1
]}

Kim, DY ^{[1
]}

Kang, TW ^{[1
]}

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

来源：

NANOSTRUCTURED INTERFACES | 2002年 / 727卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN nanorods were grown on (0001) sapphire substrates by hydride vapor phase epitaxy (HVPE) through a self-assemble process. The nanorods were grown at high growth rate, with the c-axis maintained perpendicular to the substrate surface. The dependence of rod diameter and density on growth conditions was systematically investigated. The average diameter was minimized to 80-120 nm and the density of the GaN nanorods was 100x10(12) rods/m(2).

引用

页码：97 / 102

页数：6

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