Growth of GaN nanorods on (0001) sapphire substrates by hydride vapor phase epitaxy

被引：0

作者：

Kim, HM ^{[1
]}

Kim, DS ^{[1
]}

Chang, YW ^{[1
]}

Kim, DY ^{[1
]}

Kang, TW ^{[1
]}

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

来源：

NANOSTRUCTURED INTERFACES | 2002年 / 727卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN nanorods were grown on (0001) sapphire substrates by hydride vapor phase epitaxy (HVPE) through a self-assemble process. The nanorods were grown at high growth rate, with the c-axis maintained perpendicular to the substrate surface. The dependence of rod diameter and density on growth conditions was systematically investigated. The average diameter was minimized to 80-120 nm and the density of the GaN nanorods was 100x10(12) rods/m(2).

引用

页码：97 / 102

页数：6

共 50 条

[1] Semipolar GaN Growth on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
Yamane, K.
Okada, N.
Furuya, H.
Tadatomo, K.
GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
[2] Nucleation characteristics of GaN nanorods grown on etched sapphire substrates by hydride vapor phase epitaxy
Sohn, Yuri
Kim, Chinkyo
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) : 2953 - 2955
[3] Growth of GaN nanorods by a hydride vapor phase epitaxy method
Kim, HM
Kim, DS
Park, YS
Kim, DY
Kang, TW
Chung, KS
ADVANCED MATERIALS, 2002, 14 (13-14) : 991 - +
[4] Growth and morphology of Er-doped GaN on sapphire and hydride vapor phase epitaxy substrates
Birkhahn, R
Hudgins, R
Lee, D
Steckl, AJ
Molnar, RJ
Saleh, A
Zavada, JM
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03): : 1195 - 1199
[5] Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy
Kumagai, Yoshinao
Adachi, Hirokazu
Otake, Aya
Higashikawa, Yoshihiro
Togashi, Rie
Murakami, Hisashi
Koukitu, Akinori
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
[6] Nucleation of GaN on sapphire substrates at intermediate temperatures by Hydride Vapor Phase Epitaxy
Lukin, G.
Roeder, C.
Niederschlag, E.
Shashev, Y.
Muehle, U.
Paetzold, O.
Kortus, J.
Rafaja, D.
Stelter, M.
CRYSTAL RESEARCH AND TECHNOLOGY, 2012, 47 (02) : 121 - 130
[7] Direct growth of GaN on (0001) sapphire by low pressure hydride vapour phase epitaxy
Richter, E
Gramlich, S
Klein, A
Nebauer, E
Rechenberg, I
Zeimer, U
Weyers, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (01): : 439 - 442
[8] Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers
S. Gu
R. Zhang
Y. Shi
Y. Zheng
L. Zhang
T.F. Kuech
Applied Physics A, 2002, 74 : 537 - 540
[9] Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers
Gu, S
Zhang, R
Shi, Y
Zheng, Y
Zhang, L
Kuech, TF
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (04): : 537 - 540
[10] Bowing of GaN substrates by hydride vapor phase epitaxy
Park, SS
Park, IW
Choh, SH
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 60 - 63

← 1 2 3 4 5 →