Ultra fast melting process in femtosecond laser crystallization of thin a-Si layer

被引：13

作者：

Izawa, Yusaku ^{[1
]}

Tokita, Shigeki ^{[2
]}

Fujita, Masayuki ^{[1
,3
]}

Norimatsu, Takayoshi ^{[1
]}

Izawa, Yasukazu ^{[1
]}

机构：

[1] Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan

[2] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan

[3] Inst Laser Technol, Suita, Osaka 5650871, Japan

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 24期

关键词：

Femtosecond laser; Crystallization; Pump-Probe measurement; TEM; Amorphous silicon; Liquid silicon; SILICON; AMORPHIZATION; PULSES; ABLATION;

D O I：

10.1016/j.apsusc.2009.04.067

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we investigated the mechanism of crystallization induced by femtosecond laser irradiation for an amorphous Si (a-Si) thin layer on a crystalline Si (c-Si) substrate. The fundamental, SHG, THG wavelength of a Ti:Sapphire laser was used for the crystallization process. To investigate the processed areas we performed Laser Scanning Microscopy (LSM), Transmission Electron Microscopy (TEM) and Imaging Pump-Probe measurements. Except for 267 nm femtosecond laser irradiation, the crystallization occurred well. The threshold fluences for the crystallization using 800 nm and 400 nm femtosecond laser irradiations were 100 mJ/cm(2) and 30 mJ/cm(2), respectively. TEM observation revealed that the crystallization occurred by epitaxial growth from the boundary surface between the a-Si layer and c-Si substrate. The melting depths estimated by Imaging Pump-Probe measurements became shallower when the shorter wavelength was used. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：9764 / 9769

页数：6

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