Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

被引：6
|
作者：
Vasileuski, Yury [1 ]
Malyshev, Sergei [1 ]
Chizh, Alexander [1 ]
机构：
[1] Natl Acad Sci Belarus, BI Stepanov Phys Inst, Minsk 220090, BELARUS
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 14-15期
关键词：
Avalanche photodiode; Edge breakdown; 2D numerical simulation;
D O I：
10.1007/s11082-009-9324-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p(+)-region. Simulation results of 2D electric field and impact ionization rate profile, current-voltage, capacitance-voltage and bandwidth-gain characteristics are discussed.
引用
收藏
页码：1247 / 1253
页数：7
相关论文
共 50 条
  • [1] Design considerations for guardring-free planar InGaAs/InP avalanche photodiode
    Yury Vasileuski
    Sergei Malyshev
    Alexander Chizh
    Optical and Quantum Electronics, 2008, 40 : 1247 - 1253
  • [2] Numerical simulation of guardring-free planar InP/InGaAs avalanche photodiode
    Malyshev, Sergei A.
    Chizh, Alexander L.
    Vasileuski, Yury G.
    EUROCON 2007: THE INTERNATIONAL CONFERENCE ON COMPUTER AS A TOOL, VOLS 1-6, 2007, : 658 - 661
  • [3] Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes
    Yagyu, Eiji
    Ishimura, Eitaro
    Nakaji, Masaharu
    Ihara, Susumu
    Mikami, Yohei
    Itamoto, Hiromitsu
    Aoyagi, Toshitaka
    Yoshiara, Kiichi
    Tokuda, Yasunori
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 27 (5-8) : 1011 - 1017
  • [4] Investigation of guardring-free planar AlInAs avalanche photodiodes
    Yagyu, E
    Ishimura, E
    Nakaji, M
    Aoyagi, T
    Yoshiara, K
    Tokuda, Y
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1264 - 1266
  • [5] Degradation mode analysis on highly reliable guardring-free planar InAlAs avalanche photodiodes
    Ishimura, Eitaro
    Yagyu, Eiji
    Nakaji, Masaharu
    Ihara, Susumu
    Yoshiara, Kiichi
    Aoyagi, Toshitaka
    Tokuda, Yasunori
    Ishikawa, Takahide
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2007, 25 (12) : 3686 - 3693
  • [6] Design and properties of InGaAs/InGaAsP/InP avalanche photodiode
    Hasko, Daniel
    Kovac, Jaroslav
    Uherek, Frantisek
    Skriniarova, Jaroslava
    Jakabovic, Jan
    Peternai, Lorant
    JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS, 2007, 58 (03): : 173 - 176
  • [7] Guardring-free planar AlInAs avalanche photodiodes for 2.5-Gb/s receivers with high sensitivity
    Yagyu, Eiji
    Ishimura, Eitaro
    Nakaji, Masaharu
    Mikami, Yohei
    Aoyagi, Toshitaka
    Yoshiara, Kiiehi
    Tokuda, Yasunori
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (9-12) : 765 - 767
  • [8] Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer
    Hyun, KS
    Kwon, YH
    Yun, I
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (04) : L779 - L784
  • [9] Theroretical Modelling of Zinc Diffusion for InGaAs/InP Planar Avalanche Photodiode
    Nie, Biying
    Tong, Zhonghua
    Xie, Zongheng
    Shan, Jie
    Chen, Xi
    Xie, Shiyu
    Fang, Ruiyu
    Xu, Dong
    2022 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE, ACP, 2022, : 1496 - 1499
  • [10] Investigations of floating guard structures in a planar InGaAs/InGaAsP/InP avalanche photodiode
    Cho, SR
    Yang, SK
    Ma, JS
    Yu, JS
    Lee, SD
    Choo, AG
    Kim, TI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 38 (03) : 182 - 185
12345