Numerical simulation of guardring-free planar InP/InGaAs avalanche photodiode

被引：0
|
作者：
Malyshev, Sergei A. [1 ]
Chizh, Alexander L. [1 ]
Vasileuski, Yury G. [1 ]
机构：
[1] Natl Acad Sci Belarus, Inst Elect, Minsk, BELARUS
来源：
EUROCON 2007: THE INTERNATIONAL CONFERENCE ON COMPUTER AS A TOOL, VOLS 1-6 | 2007年
关键词：
semiconductor device modeling; avalanche photodiodes; avalanche breakdown;
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Theoretical analysis of guardring-free planar InP/InGaAs avalanche photodiode with additional decoupling p-charge sheet based on 2-D drift-diffusion simulation is presented. Design of such avalanche photodiode and conditions under which edge breakdown does not occur are discussed.
引用
收藏
页码：658 / 661
页数：4
相关论文
共 50 条
  • [1] Design considerations for guardring-free planar InGaAs/InP avalanche photodiode
    Vasileuski, Yury
    Malyshev, Sergei
    Chizh, Alexander
    OPTICAL AND QUANTUM ELECTRONICS, 2008, 40 (14-15) : 1247 - 1253
  • [2] Design considerations for guardring-free planar InGaAs/InP avalanche photodiode
    Yury Vasileuski
    Sergei Malyshev
    Alexander Chizh
    Optical and Quantum Electronics, 2008, 40 : 1247 - 1253
  • [3] Investigation of guardring-free planar AlInAs avalanche photodiodes
    Yagyu, E
    Ishimura, E
    Nakaji, M
    Aoyagi, T
    Yoshiara, K
    Tokuda, Y
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1264 - 1266
  • [4] Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes
    Yagyu, Eiji
    Ishimura, Eitaro
    Nakaji, Masaharu
    Ihara, Susumu
    Mikami, Yohei
    Itamoto, Hiromitsu
    Aoyagi, Toshitaka
    Yoshiara, Kiichi
    Tokuda, Yasunori
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2009, 27 (5-8) : 1011 - 1017
  • [5] Degradation mode analysis on highly reliable guardring-free planar InAlAs avalanche photodiodes
    Ishimura, Eitaro
    Yagyu, Eiji
    Nakaji, Masaharu
    Ihara, Susumu
    Yoshiara, Kiichi
    Aoyagi, Toshitaka
    Tokuda, Yasunori
    Ishikawa, Takahide
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2007, 25 (12) : 3686 - 3693
  • [6] 2D Simulation of Planar InP/InGaAs Avalanche Photodiode with No Guard Rings
    Malyshev, S. A.
    Chizh, A. L.
    Vasileuski, Y. G.
    NUSOD '08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, 2008, : 81 - 82
  • [7] Guardring-free planar AlInAs avalanche photodiodes for 2.5-Gb/s receivers with high sensitivity
    Yagyu, Eiji
    Ishimura, Eitaro
    Nakaji, Masaharu
    Mikami, Yohei
    Aoyagi, Toshitaka
    Yoshiara, Kiiehi
    Tokuda, Yasunori
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (9-12) : 765 - 767
  • [8] Numerical Simulation of the High Gain and Low Breakdown Voltage InGaAs/InP Avalanche Photodiode
    Hu, D. P.
    Xiong, D. Y.
    Guo, F. M.
    ADVANCES IN MATERIALS AND MATERIALS PROCESSING, PTS 1-3, 2013, 652-654 : 612 - 615
  • [9] Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer
    Hyun, KS
    Kwon, YH
    Yun, I
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (04) : L779 - L784
  • [10] Theroretical Modelling of Zinc Diffusion for InGaAs/InP Planar Avalanche Photodiode
    Nie, Biying
    Tong, Zhonghua
    Xie, Zongheng
    Shan, Jie
    Chen, Xi
    Xie, Shiyu
    Fang, Ruiyu
    Xu, Dong
    2022 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE, ACP, 2022, : 1496 - 1499
12345