Design considerations for guardring-free planar InGaAs/InP avalanche photodiode

被引：6
|
作者：
Vasileuski, Yury [1 ]
Malyshev, Sergei [1 ]
Chizh, Alexander [1 ]
机构：
[1] Natl Acad Sci Belarus, BI Stepanov Phys Inst, Minsk 220090, BELARUS
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 14-15期
关键词：
Avalanche photodiode; Edge breakdown; 2D numerical simulation;
D O I：
10.1007/s11082-009-9324-z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Design and characteristics of the guardring-free planar InGaAs/InP avalanche photodiode are considered based on 2D numerical simulation. The device incorporates n-charge sheet and p-charge sheet, which spatially separates multiplication layer and p(+)-region. Simulation results of 2D electric field and impact ionization rate profile, current-voltage, capacitance-voltage and bandwidth-gain characteristics are discussed.
引用
收藏
页码：1247 / 1253
页数：7
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