Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET

被引：21

作者：

Huang, Weixiao ^{[1
]}

Chow, T. Paul ^{[1
]}

Niiyama, Yuki ^{[2
]}

Nomura, Takehiko ^{[2
]}

Yoshida, Seikoh ^{[2
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

[2] Furukawa Elect Corp Ltd, Yokohama R&D Lab, Yokohama, Kanagawa 2200073, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 10期

关键词：

Epilayer RESURF; gallium nitride; high voltage; MOSFET; n-channel; N-TYPE;

D O I：

10.1109/LED.2009.2027820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good tradeoff between breakdown voltage and specific on-resistance for the first time. Device with 4-mu m channel length and 16-mu m RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 m Omega . cm(2) (V-G - V-T = 20 V), best reported to date.

引用

页码：1018 / 1020

页数：3

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