Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET

被引：21

作者：

Huang, Weixiao ^{[1
]}

Chow, T. Paul ^{[1
]}

Niiyama, Yuki ^{[2
]}

Nomura, Takehiko ^{[2
]}

Yoshida, Seikoh ^{[2
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

[2] Furukawa Elect Corp Ltd, Yokohama R&D Lab, Yokohama, Kanagawa 2200073, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 10期

关键词：

Epilayer RESURF; gallium nitride; high voltage; MOSFET; n-channel; N-TYPE;

D O I：

10.1109/LED.2009.2027820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good tradeoff between breakdown voltage and specific on-resistance for the first time. Device with 4-mu m channel length and 16-mu m RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 m Omega . cm(2) (V-G - V-T = 20 V), best reported to date.

引用

页码：1018 / 1020

页数：3

共 50 条

[31] Design and experimental demonstration of high-voltage lateral nMOSFETs and high-temperature CMOS ICs*
Isukapati, Sundar Babu
Zhang, Hua
Liu, Tianshi
Gupta, Utsav
Ashik, Emran
Morgan, Adam J.
Jang, Seung Yup
Lee, Bongmook
Sung, Woongje
Fayed, Ayman
Agarwal, Anant K.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2024, 169
[32] Threading dislocations in GaN high-voltage switches
Setera, Brett
Christou, Aristos
MICROELECTRONICS RELIABILITY, 2021, 124
[33] High-voltage SiC and GaN power devices
Chow, TP
PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 198 - 200
[34] A novel high-performance asymmetric hetero-doped S/D high-voltage MOSFET
Cai, J
Harley-Stead, M
Park, S
Wöloszyn, J
Gallacher, V
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) : 495 - 497
[35] GaN-on-Si For High-Voltage Applications
Visalli, Domenica
Van Hove, Marleen
Srivastava, Puneet
Marcon, Denis
Geens, Karen
Kang, Xuanwu
Vandenplas, Erwin
Viaene, John
Leys, Maarten
Cheng, Kai
Sijmus, Bram
Decoutere, Stefaan
Borghs, Gustaaf
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 101 - 112
[36] Design criteria of high-voltage lateral RESURF JFETs on 4H-SiC
Sheng, K
Hu, ST
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (10) : 2300 - 2308
[37] HIGH-VOLTAGE MOSFET BIPOLAR SQUARE-WAVE GENERATOR
USHER, TD
MCAULEY, GA
REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (07): : 2027 - 2030
[38] Precise SPICE macromodel applied to high-voltage power MOSFET
Lomeli, FS
Cerdeira, A
MICROELECTRONICS RELIABILITY, 2002, 42 (01) : 149 - 152
[39] A new high-voltage power MOSFET for power conversion applications
Galluzzo, A
Melito, M
Musumeci, S
Saggio, M
Raciti, A
IAS 2000 - CONFERENCE RECORD OF THE 2000 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-5, 2000, : 2966 - 2973
[40] Suppression Techniques of Subthreshold Hump Effect for High-Voltage MOSFET
Baek, Ki-Ju
Na, Kee-Yeol
Park, Jeong-Hyeon
Kim, Yeong-Seuk
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13 (05) : 522 - 529

← 1 2 3 4 5 →