Displacement current staircase in mechanical single-electron turnstiles

被引:10
|
作者
Majima, Y [1 ]
Nagano, K
Okuda, A
机构
[1] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
[2] Japan Sci & Technol Corp, PRESTO, Org & Funct, Tokyo 1528552, Japan
关键词
displacement current staircase; Coulomb blockade; tunneling current; scanning probe microscopy; mechanical oscillation;
D O I
10.1143/JJAP.41.5381
中图分类号
O59 [应用物理学];
学科分类号
摘要
Coulomb-blockade-based displacement current staircases are observed in the displacement current-voltage characteristic's of double barrier tunneling junctions. with a vibrating probe. Displacement current flows periodically in accordance with the mechanical oscillation of the reservoir and is separated from the tunneling current using a two-phase lock-in amplifier. The theoretical displacement current staircase is successfully fitted to the measurement. This displacement current staircase demonstrates the mechanical single-electron turnstiles in which the quantized number of electrons on the gold dots alternates periodically with the mechanical oscillation.
引用
收藏
页码:5381 / 5385
页数:5
相关论文
共 50 条
  • [41] Current noise of a single-electron transistor coupled to a nanomechanical resonator
    Armour, AD
    PHYSICAL REVIEW B, 2004, 70 (16) : 1 - 11
  • [42] Current noise of a superconducting single-electron transistor coupled to a resonator
    Harvey, T. J.
    Rodrigues, D. A.
    Armour, A. D.
    PHYSICAL REVIEW B, 2008, 78 (02)
  • [43] Hybrid single-electron transistor as a source of quantized electric current
    Pekola, Jukka R.
    Vartiainen, Juha J.
    Mottonen, Mikko
    Saira, Olli-Pentti
    Meschke, Matthias
    Averin, Dmitri V.
    NATURE PHYSICS, 2008, 4 (02) : 120 - 124
  • [44] Single-electron current gain in a quantum dot with three leads
    Welker, Armin C.
    Weis, Juergen
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (10)
  • [45] Current conduction models in the high temperature single-electron transistor
    Dubuc, Christian
    Beaumont, Arnaud
    Beauvais, Jacques
    Drouin, Dominique
    SOLID-STATE ELECTRONICS, 2009, 53 (05) : 478 - 482
  • [46] Tuning current plateau regions in parallelized single-electron pumps
    Kim, Bum-Kyu
    Yu, Byeong-Sung
    Park, Suk-In
    Song, Jindong
    Kim, Nam
    Bae, Myung-Ho
    AIP ADVANCES, 2022, 12 (10)
  • [47] Self-Referenced Single-Electron Quantized Current Source
    Fricke, Lukas
    Wulf, Michael
    Kaestner, Bernd
    Hohls, Frank
    Mirovsky, Philipp
    Mackrodt, Brigitte
    Dolata, Ralf
    Weimann, Thomas
    Pierz, Klaus
    Siegner, Uwe
    Schumacher, Hans W.
    PHYSICAL REVIEW LETTERS, 2014, 112 (22)
  • [48] Standards of current and capacitance based on single-electron tunneling devices
    Keller, MW
    RECENT ADVANCES IN METROLOGY AND FUNDAMENTAL CONSTANTS, 2001, 146 : 291 - 316
  • [49] The anomalous negative acoustoelectric current in single-electron transport devices
    Song, L.
    Chen, S. W.
    He, J. H.
    Zhang, C. Y.
    Lu, C.
    Gao, J.
    SOLID STATE COMMUNICATIONS, 2010, 150 (5-6) : 292 - 296
  • [50] Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles (vol 89, 165302, 2014)
    Yamahata, Gento
    Nishiguchi, Katsuhiko
    Fujiwara, Akira
    PHYSICAL REVIEW B, 2014, 90 (03):