A wideband 27-dBm CMOS T/R switch using stacking architecture, high substrate isolation and RF floated body

This article presents comprehensive methods for the design of a wideband CMOS transmit/receive (T/R) switch. Techniques such as RF floated body to extend the bandwidth and decrease the insertion loss (IL), and stacking architecture with high substrate isolation to enhance the power-handling capability, are used for the design of a T/R switch on a standard 0.18-mu m triple-well process. The measured performance of the T/R switch demonstrates the effectiveness of the methods presented in this article such that IL less than 1.28 dB, isolation higher than 24 dB, and input 1 dB compression point of 27 dBm can be achieved from 2 to 5.8 GHz.