DC-20 GHz High Isolation SP3T Switch in 0.13-μm CMOS Using Deep-N-well Transistors

被引：0

作者：

Ye, Yongjie ^{[1
]}

Yang, Pengwei ^{[1
]}

Yuan, Jie ^{[1
]}

Cheng, Guoxiao ^{[1
]}

Wu, Wen ^{[1
]}

机构：

[1] Nanjing Univ Sci & Technol, Key Lab Near Range RF Sensing ICs & Microsyst, Nanjing 210094, Peoples R China

来源：

2024 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY, ICMMT | 2024年

基金：

中国国家自然科学基金;

关键词：

SP3T; UWB; DNW; floating; body; high isolation;

D O I：

10.1109/ICMMT61774.2024.10672273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a DC-20 GHz ultra-wide bandwidth (UWB) single-pole triple-throw (SP3T) switch fabricated in 0.13-mu m process. Three shunt Deep-N-Well (DNW) transistors are employed to achieve higher isolation. The off-state capacitors of two DNW transistors are absorbed into the impedance-matching network to achieve wide bandwidth. And the floating-body technique is employed to enhance the power-handling capability. On-wafer measurement demonstrates that the SP3T switch achieves the insertion loss of 0.8-3.4 dB and the isolation of better than 43.6 dB from 0-20 GHz. At 15 GHz, the simulated input 1dB compression power (IP1dB) of 10.2 dBm is achieved. The chip size of the switch is 1.3 x 1.0 mm(2) including pads.

引用

页数：3

共 11 条

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MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2023, 65 (08) : 2126 - 2131
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Dept. of Communications Engineering, National Chiao Tung University, Hsin-Chu, Taiwan
不详
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IEEE Radio Freq Integr Circuits Symp RFIC Dig Tech Pap, (619-622):
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