Lattice spacing mapping in large silicon ingot using high resolution lattice comparator

被引：1
|
作者：
Fujimoto, H [1 ]
Waseda, A [1 ]
Xiaowei, Z [1 ]
Nakayama, K [1 ]
Fujii, K [1 ]
Sugiyama, H [1 ]
Ando, M [1 ]
机构：
[1] Natl Metrol Inst Japan, Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058563, Japan
来源：
2002 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS, CONFERENCE DIGEST | 2002年
关键词：
D O I：
10.1109/CPEM.2002.1034842
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method of fast lattice spacing mapping in large Silicon crystal is described. Resolution of 0.02ppm is obtained with measuring time of 5minutes per point. Measuring time reduction is estimated feasible by simple modification of measurement. Efficacy of this method is discussed.
引用
收藏
页码：304 / 305
页数：2
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