THE (220) LATTICE SPACING OF SILICON

被引：18
|
作者：
BASILE, G [1 ]
BERGAMIN, A [1 ]
CAVAGNERO, G [1 ]
MANA, G [1 ]
VITTONE, E [1 ]
ZOSI, G [1 ]
机构：
[1] UNIV TURIN,I-10125 TURIN,ITALY
来源：
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1995年 / 44卷 / 02期
关键词：
D O I：
10.1109/19.377898
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Further details are given of an experiment based on combined X-ray and optical interferometry to measure the (220) lattice spacing of silicon. A resolution of 5 x 10(-9)d(220) was achieved and the silicon d(220) was determined to 3 x 10(-8)d(220) accuracy. The measured value is d(220) = (192015.551 +/- 0.005) fm. After correction for the impurity-induced lattice strain, d(220) = (192015.569 +/- 0.006) fm was obtained.
引用
收藏
页码：526 / 529
页数：4
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