A fourfold coordinated point defect in silicon

被引：105

作者：

Goedecker, S ^{[1
]}

Deutsch, T ^{[1
]}

Billard, L ^{[1
]}

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, SP2ML Sim, F-38054 Grenoble 9, France

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.88.235501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.

引用

页数：4

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