A fourfold coordinated point defect in silicon

被引：105

作者：

Goedecker, S ^{[1
]}

Deutsch, T ^{[1
]}

Billard, L ^{[1
]}

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, SP2ML Sim, F-38054 Grenoble 9, France

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 88卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.88.235501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Vacancies, interstitials, and Frenkel pairs are considered to be the basic point defects in silicon. We challenge this point of view by presenting density functional calculations that show that there is a stable point defect in silicon that has fourfold coordination and is lower in energy than the traditional defects.

引用

页数：4

共 50 条

[21] Iron point defect reduction in multicrystalline silicon solar cells
Pickett, Matthew D.
Buonassisi, Tonio
APPLIED PHYSICS LETTERS, 2008, 92 (12)
[22] POINT-DEFECT RELAXATION IN SILICON SINGLE-CRYSTALS
GADAUD, P
WOIRGARD, J
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1989, 110 : L1 - L4
[23] POINT-DEFECT, CARBON AND OXYGEN COMPLEXING IN POLYCRYSTALLINE SILICON
KALEJS, JP
JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) : 298 - 303
[24] Effect of doping on point defect incorporation during silicon growth
Voronkov, VV
Falster, R
MICROELECTRONIC ENGINEERING, 2001, 56 (1-2) : 165 - 168
[25] Point defect behaviour resulting from dopant diffusions in silicon
Okino, T
DEFECT AND DIFFUSION FORUM, 1997, 148 : 48 - 102
[26] Simulation of point defect quenching in silicon on pulsed laser heating
Taganrogskij Radiotekhnicheskij Inst, im. V.D. Kalmykova, Taganrog, Russia
Fiz Khim Obr Mater, 5 (124-129):
[27] Boron diffusion in silicon: the anomalies and control by point defect engineering
Shao, L
Liu, JR
Chen, QY
Chu, WK
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2003, 42 (3-4): : 65 - 114
[28] Study of fluorine behavior in silicon by selective point defect injection
Kham, MN
El Mubarek, HAW
Bonar, JM
Ashburn, P
APPLIED PHYSICS LETTERS, 2005, 87 (01)
[29] Diffusion mechanisms and intrinsic: Point-defect properties in silicon
Bracht, H
MRS BULLETIN, 2000, 25 (06) : 22 - 27
[30] Point defect injection in silicon during thin oxide formation
Skarlatos, D
Omri, M
Tsamis, C
Claverie, A
Tsoukalas, D
SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 914 - 925

← 1 2 3 4 5 →