Integration issues for low dielectric constant materials in each generation of ULSI's

被引：0

作者：

Gomi, H ^{[1
]}

Kishimoto, K ^{[1
]}

Usami, T ^{[1
]}

Koyanagi, K ^{[1
]}

Yokoyama, T ^{[1
]}

Oda, N ^{[1
]}

Matsubara, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Kanagawa 2291198, Japan

来源：

LOW-DIELECTRIC CONSTANT MATERIALS V | 1999年 / 565卷

关键词：

D O I：

10.1557/PROC-565-161

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The technologies utilizing Fluorinated Silicon Oxide (FSG, k = 3.6) and Hydrogen Silsesquioxane (HSQ, k = 3.0) have been established for 0.25-mu m and 0.18-mu m generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k = 2.5) as one of the promising low-k materials for the next generation ULSIs.

引用

页码：161 / 171

页数：11

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