Integration issues for low dielectric constant materials in each generation of ULSI's

被引：0

作者：

Gomi, H ^{[1
]}

Kishimoto, K ^{[1
]}

Usami, T ^{[1
]}

Koyanagi, K ^{[1
]}

Yokoyama, T ^{[1
]}

Oda, N ^{[1
]}

Matsubara, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, ULSI Device Dev Labs, Kanagawa 2291198, Japan

来源：

LOW-DIELECTRIC CONSTANT MATERIALS V | 1999年 / 565卷

关键词：

D O I：

10.1557/PROC-565-161

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The technologies utilizing Fluorinated Silicon Oxide (FSG, k = 3.6) and Hydrogen Silsesquioxane (HSQ, k = 3.0) have been established for 0.25-mu m and 0.18-mu m generation ULSIs. However, low-k materials for the next generation ULSIs, which have a dielectric constant of less than 3.0, have not become mature yet. In this paper, we review process integration issues in applying FSG and HSQ, and describe integration results and device performance using Fluorinated Amorphous Carbon (a-C:F, k = 2.5) as one of the promising low-k materials for the next generation ULSIs.

引用

页码：161 / 171

页数：11

共 50 条

[31] Porous low dielectric constant materials for microelectronics
Baklanov, MR
Maex, K
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2006, 364 (1838): : 201 - 215
[32] Review of polymer materials with low dielectric constant
Zhao, Xiong-Yan
Liu, Hong-Jie
POLYMER INTERNATIONAL, 2010, 59 (05) : 597 - 606
[33] Mesoporous oxides as low dielectric constant materials
O'Brien, S
Morris, MA
McGrath, J
1999 INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS, PROCEEDINGS, 1999, 3906 : 189 - 194
[34] Comparison of various low dielectric constant materials
Cheng, Yi-Lung
Lee, Chih-Yen
Hung, Wei-Jie
Chen, Giin-Shan
Fang, Jau-Shiung
THIN SOLID FILMS, 2018, 660 : 871 - 878
[35] Method to predict effective dielectric constant of porous silica low dielectric constant materials
Dong, Xijie
Hu, Yifan
Zhao, Jun
Wu, Yuying
PHYSICA B-CONDENSED MATTER, 2010, 405 (17) : 3551 - 3554
[36] Spectroscopic studies of low dielectric constant fluorinated amorphous carbon films for ulsi integrated circuits
Ma, YJ
Yang, HN
Guo, J
Sathe, C
Agui, A
Nordgren, J
APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE IV, 1998, 524 : 169 - 178
[37] Mechanism of flat band voltage dielectric constant for shift of organic material with low ULSI interconnection
Chang, CL
Huang, TJ
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 98 (01): : 45 - 53
[38] Materials issues and characterization of low-k dielectric materials
Ryan, ET
McKerrow, AJ
Leu, JP
Ho, PS
MRS BULLETIN, 1997, 22 (10) : 49 - 54
[39] Materials Issues and Characterization of Low-k Dielectric Materials
E. Todd Ryan
Andrew J. McKerrow
Jihperng Leu
Paul S. Ho
MRS Bulletin, 1997, 22 : 49 - 54
[40] Materials issues and characterization of low-k dielectric materials
MRS Bull, 10 (49-54):

← 1 2 3 4 5 →