Shallow thermal donors in nitrogen-doped silicon single crystals

被引：2

作者：

Voronkov, VV ^{[1
]}

Voronkova, GI ^{[1
]}

Batunina, AV ^{[1
]}

Golovina, VN ^{[1
]}

Arapkina, LV ^{[1
]}

Tyurina, NB ^{[1
]}

Gulyaeva, AS ^{[1
]}

Mil'vidskii, MG ^{[1
]}

机构：

[1] State Rare Met Res Inst, Moscow 109017, Russia

来源：

PHYSICS OF THE SOLID STATE | 2002年 / 44卷 / 04期

关键词：

D O I：

10.1134/1.1470566

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Czochralski-grown nitrogen-doped silicon crystals contain shallow thermal donors (STD) which are not present in reference crystals. In the course of annealing at 600 or 650degreesC, the STD concentration reaches saturation and this concentration scales with nitrogen content N as N-1/2. This implies that an STD includes only one nitrogen atom and that the most likely model of the STD defect is the NOm complex of an interstitial nitrogen atom with in oxygen atoms. The number in is estimated as, on the average, m = 3 from data on the temperature dependence of the equilibrium constant for the complex formation reaction (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：727 / 731

页数：5

共 50 条

[31] Defects in nitrogen-doped multicrystalline silicon
Yang, DR
Li, DS
Ghosh, M
Möller, HJ
PHYSICA B-CONDENSED MATTER, 2004, 344 (1-4) : 1 - 4
[32] DIFFUSION OF NITROGEN INTO SILICON CARBIDE SINGLE CRYSTALS DOPED WITH ALUMINUM
KROKO, LJ
MILNES, AG
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1125 - +
[33] INFLUENCE OF NICKEL ON THE GENERATION OF THERMAL DONORS IN SILICON SINGLE-CRYSTALS
TALIPOV, FM
BAKHADYRKHANOV, MK
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (12): : 1365 - 1365
[34] INFLUENCE OF GERMANIUM ON THE FORMATION OF THERMAL DONORS IN SILICON SINGLE-CRYSTALS
DASHEVSKII, MY
KORLYAKOV, DN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (04): : 461 - 462
[35] ELECTRON PARAMAGNETIC RESONANCE IN NITROGEN-DOPED SINGLE CRYSTALS OF BETA-SIC
ALTAISKII, YM
ZARITSKI.IM
ZEVIN, VY
KONCHITS, AA
SOVIET PHYSICS SOLID STATE,USSR, 1971, 12 (10): : 2453 - +
[36] Halogen impurities in silicon: Shallow single donors
Chadi, DJ
APPLIED PHYSICS LETTERS, 1997, 71 (06) : 806 - 808
[37] Halogen impurities in silicon: shallow single donors
Appl Phys Lett, 6 (806):
[38] Photoluminescence of the ZnSe single crystals doped by thermal diffusion of nitrogen
Colibaba, G. V.
Nedeoglo, D. D.
PHYSICA B-CONDENSED MATTER, 2009, 404 (02) : 184 - 189
[39] Thermal donors in silicon doped with erbium
Emtsev, VV
Sobolev, NA
Andreev, BA
Poloskin, DS
Shek, EI
SOLID STATE PHENOMENA, 1997, 57-8 : 207 - 211
[40] Applicability of nitrogen-doped ZnO single crystals for photoconductive type UV sensors
Takahashi, Shuzo
Abe, Takami
Nakagawa, Akira
Kamata, Syuhei
Chiba, Tetsuya
Nakagawa, Michiko
Kashiwaba, Yasuhiro
Chiba, Shigeki
Endo, Haruyuki
Meguro, Kazuyuki
Daibo, Masahiro
Niikura, Ikuo
Kashiwaba, Yasube
Oshima, Shuzo
Osada, Hiroshi
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 7-8, 2014, 11 (7-8): : 1304 - 1307

← 1 2 3 4 5 →