Shallow thermal donors in nitrogen-doped silicon single crystals

被引：2

作者：

Voronkov, VV ^{[1
]}

Voronkova, GI ^{[1
]}

Batunina, AV ^{[1
]}

Golovina, VN ^{[1
]}

Arapkina, LV ^{[1
]}

Tyurina, NB ^{[1
]}

Gulyaeva, AS ^{[1
]}

Mil'vidskii, MG ^{[1
]}

机构：

[1] State Rare Met Res Inst, Moscow 109017, Russia

来源：

PHYSICS OF THE SOLID STATE | 2002年 / 44卷 / 04期

关键词：

D O I：

10.1134/1.1470566

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Czochralski-grown nitrogen-doped silicon crystals contain shallow thermal donors (STD) which are not present in reference crystals. In the course of annealing at 600 or 650degreesC, the STD concentration reaches saturation and this concentration scales with nitrogen content N as N-1/2. This implies that an STD includes only one nitrogen atom and that the most likely model of the STD defect is the NOm complex of an interstitial nitrogen atom with in oxygen atoms. The number in is estimated as, on the average, m = 3 from data on the temperature dependence of the equilibrium constant for the complex formation reaction (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：727 / 731

页数：5

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