共 50 条
- [41] Electrical and optical properties of Cr and Fe implanted n-GaN Polyakov, A.Y. (spear@mse.ufl.edu), 1600, American Institute of Physics Inc. (93):
- [42] Electrical properties of ICP plasma-damaged n-GaN PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 786 - 789
- [44] Electrical and luminescent properties and deep traps spectra of N-polar GaN films MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 166 (01): : 83 - 88
- [45] Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (11): : 2225 - 2229
- [46] Recombination Process in InGaN/GaN MQW LED on Silicon with δ-Si Doped n-GaN Layer Faguang Xuebao/Chinese Journal of Luminescence, 2018, 39 (12): : 1722 - 1729
- [49] ELECTRICAL AND LUMINESCENT PROPERTIES OF IN-DOPED ZNSE GROWN BY LOW-PRESSURE VAPOR-PHASE EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (10): : L1736 - L1739