Electrical, luminescent, and deep trap properties of Si doped n-GaN grown by pendeo epitaxy

被引:22
|
作者
Polyakov, A. Y. [1 ]
Smirnov, N. B. [1 ,2 ]
Yakimov, E. B. [1 ,3 ]
Lee, In-Hwan [4 ,5 ]
Pearton, S. J. [6 ]
机构
[1] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
[2] Inst Rare Met, Moscow 119017, Russia
[3] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia
[4] Chonbuk Natl Univ, Sch Adv Mat Engn, Jeonju 561756, South Korea
[5] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Jeonju 561756, South Korea
[6] Univ Florida, Gainesville, FL 32611 USA
基金
新加坡国家研究基金会;
关键词
A-PLANE GAN; DEFECT DENSITY; LATERAL GROWTH; SCATTERING; REDUCTION;
D O I
10.1063/1.4939649
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical and luminescent properties and deep trap spectra of Si doped GaN films grown by maskless epitaxial lateral overgrowth (MELO) are reported. The dislocation density in the wing region of the structure was 10(6) cm (-2), while in the seed region it was 10(8) cm (-2). The major electron traps present had activation energy of 0.56 eV and concentrations in the high 10(15) cm (-3) range. A comparison of diffusion length values and 0.56 eV trap concentration in MELO GaN and epitaxial lateral overgrowth (ELOG) GaN showed a good correlation, suggesting these traps could be effective in carrier recombination. The doped MELO films were more uniform in their electrical properties than either ELOG films or undoped MELO films. We also discuss the differences in deep trap spectra and luminescence spectra of low-dislocation-density MELO, ELOG, and bulk n-GaN samples grown by hydride vapor phase epitaxy. It is suggested that the observed differences could be caused by the differences in oxygen and carbon contamination levels. (c) 2016 AIP Publishing LLC.
引用
收藏
页数:6
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