Applications of a new theory on the X-ray energy responses of semiconductor detectors to plasma X-ray diagnostics

被引:0
|
作者
Kohagura, J [1 ]
Cho, T [1 ]
Hirata, M [1 ]
Yatsu, K [1 ]
Tamano, T [1 ]
Hirano, K [1 ]
Maezawa, H [1 ]
机构
[1] NATL INST HIGH ENERGY PHYS, TSUKUBA, IBARAKI 305, JAPAN
关键词
D O I
10.1016/S0920-3796(96)00679-5
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Our recently proposed theory on X-ray energy responses of semiconductor detectors is based on the physics principle of the three-dimensional diffusion of X-ray-produced charges in a semiconductor field-free substrate region. In this paper, this diffusion process is experimentally verified using a spatially distributed charge profile produced by an X-ray beam in a multi-channel semiconductor detector. Actual X-ray profile data are distorted because of the effect of the diffusion. Using this theoretical principle, a new X-ray analysis method for obtaining plasma electron temperature profiles (that have no dependence on plasma densities) is proposed. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:183 / 187
页数:5
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