Applications of a new theory on the X-ray energy responses of semiconductor detectors to plasma X-ray diagnostics

被引：0

作者：

Kohagura, J ^{[1
]}

Cho, T ^{[1
]}

Hirata, M ^{[1
]}

Yatsu, K ^{[1
]}

Tamano, T ^{[1
]}

Hirano, K ^{[1
]}

Maezawa, H ^{[1
]}

机构：

[1] NATL INST HIGH ENERGY PHYS, TSUKUBA, IBARAKI 305, JAPAN

来源：

FUSION ENGINEERING AND DESIGN | 1997年 / 34-35卷

关键词：

D O I：

10.1016/S0920-3796(96)00679-5

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Our recently proposed theory on X-ray energy responses of semiconductor detectors is based on the physics principle of the three-dimensional diffusion of X-ray-produced charges in a semiconductor field-free substrate region. In this paper, this diffusion process is experimentally verified using a spatially distributed charge profile produced by an X-ray beam in a multi-channel semiconductor detector. Actual X-ray profile data are distorted because of the effect of the diffusion. Using this theoretical principle, a new X-ray analysis method for obtaining plasma electron temperature profiles (that have no dependence on plasma densities) is proposed. (C) 1997 Elsevier Science S.A.

引用

页码：183 / 187

页数：5

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