Analysis of channel-width effects in 0.3 mu m ultra-thin SOI NMOSFETs

被引：3
|
作者：
Choi, CH
Lee, SH
Kim, IK
Park, YK
Kong, JT
机构：
来源：
SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 1997年
关键词：
D O I：
10.1109/SISPAD.1997.621330
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experiment-based new phenomena, such as LIF energy and channel width effects in ultra-thin (T-Si = 700 Angstrom) 0.3 um SOI NMOSFETs, are analysed using TCAD tools. The relatively higher doping profile along with the width direction silicon edge can improve the breakdown characteristics (i.e., BV congruent to 0 V at W/L = 0.4 um/0.3 um). This effect, which does not coincide with typical BV characteristics in very-small SOIs, is caused by the reduction or the impact ionisation rats due to the doping and geometric effects of the silicon edge as the channel-width becomes narrower. It implies that very small SOI NMOSFETs can be well adopted for the ultra-high density DRAM cells when an optimised doping profile is provided.
引用
收藏
页码：37 / 40
页数：4
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