Channel-drain lateral profile engineering for advanced CMOS on ultra-thin SOI technology

被引：0
|
作者：
Adan, AO [1 ]
Kaneko, S [1 ]
Naka, T [1 ]
Urabe, D [1 ]
Higashi, K [1 ]
Kagisawa, A [1 ]
机构：
[1] SHARP CO LTD,VLSI DEV LAB,IC GRP,TENRI,NARA 632,JAPAN
来源：
1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/SOI.1996.552513
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：100 / 101
页数：2
相关论文
共 50 条
  • [1] Ultra-thin body and thin-BOX SOI CMOS technology analog figures of merit
    Kilchytska, V.
    Arshad, M. K. Md
    Makovejev, S.
    Olsen, S.
    Andrieu, F.
    Poiroux, T.
    Faynot, O.
    Raskin, J. -P.
    Flandre, D.
    SOLID-STATE ELECTRONICS, 2012, 70 : 50 - 58
  • [2] Self-aligned recessed source/drain ultra-thin body SOI MOSFET technology
    Zhang, ZK
    Zhang, SD
    Chan, M
    ESSDERC 2004: PROCEEDINGS OF THE 34TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2004, : 301 - 304
  • [3] Control of threshold voltage and short channel effects in ultra-thin strained-SOI CMOS
    Numata, T
    Mizuno, T
    Tezuka, T
    Koga, J
    Takagi, S
    2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2003, : 119 - 121
  • [4] Source/drain resistance modeling in bulk and ultra-thin body SOI MOSFETs
    Kim, SD
    Yuan, J
    Woo, JCS
    FIFTH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2005, : 95 - 98
  • [5] ANALYSIS OF DRAIN BREAKDOWN AND EVALUATION OF OPERATION SPEED IN ULTRA-THIN SOI MOSFETS
    YOSHIMI, M
    TAKAHASHI, M
    KAMBAYASHI, S
    KEMMOCHI, M
    WADA, T
    NATORI, K
    1989 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1989, : 15 - 16
  • [6] Ultra-thin Strained-SOI CMOS for High Temperature Operation
    Maeda, T. (t-maeda@aist.go.jp), 1600, (Institute of Electrical and Electronics Engineers Inc.):
  • [7] Self-aligned Π-shaped source/drain ultra-thin SOI MOSFETs
    Eng, Yi-Chuen
    Lin, Jyi-Tsong
    Lin, Po-Hsieh
    Huang, Hau-Yuan
    Kang, Shiang-Shi
    Kao, Kung-Kai
    Lin, Jeng-Da
    Tseng, Yi-Ming
    Tsai, Ying-Chieh
    2008 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2008, : 485 - 488
  • [8] An advanced Ge preamorphization salicide technology for ultra-thin-film SOI CMOS devices
    Hsiao, TC
    Liu, P
    Woo, JCS
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (07) : 309 - 311
  • [9] Use of ErSi2 in source/drain contacts of ultra-thin SOI MOSFETs
    Huda, MQ
    Sakamoto, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 378 - 381
  • [10] Reliability and integration of ultra-thin gate dielectrics for advanced CMOS
    Buchanan, DA
    Lo, SH
    MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 13 - 20
12345