Communication-Copper Grain Growth and Texture Formation in Copper-Titanium Thin Films

Six samples of titaniumwith 50 nm copper on top were deposited on Si substrates and annealed at 400 degrees C. Phase analysis demonstrates the presence of CuTi, Cu4Ti and Cu3Ti phases which appear as a result of diffusion. The comparison between samples showed a slight change in Cu (111) crystallite size. However, CuTi crystallite size increased with increase in Ti layer thickness. Stress showed an opposite trend. Significant texture improvement was noted for Cu (111) caused by diffusion phases. Larger grains, lower stresses, and highly textured materials can be attractive candidates to resist electromigration in semiconductor devices. (C) 2016 The Electrochemical Society. All rights reserved.