Grazing incidence X-ray diffraction analysis of surface modified SiC layers

被引:3
|
作者
Neuhauser, J [1 ]
Treffer, G [1 ]
Planitz, H [1 ]
Wagner, W [1 ]
Marx, G [1 ]
机构
[1] TECH UNIV CHEMNITZ ZWICKAU,DEPT CHEM,D-09107 CHEMNITZ,GERMANY
来源
关键词
Titanium; Carbide; Chemical Vapor Deposition; Incidence Angle; Silicon Carbide;
D O I
10.1007/s002160050421
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Thin films of silicon carbide with codeposited elemental silicon were prepared by chemical vapor deposition (CVD). In a second CVD-process a thin titanium layer was deposited on the SiC(Si) basic layer. The solid state reaction between titanium and the codeposited silicon can be observed by X-ray diffractometry. A helpful analytical method for the observation of the growth of the reaction products is grazing incidence X-ray diffractometry. Various diffraction patterns of titanium silicides can be obtained by decreasing incidence angles.
引用
收藏
页码:333 / 334
页数:2
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