Grazing incidence X-ray diffraction analysis of surface modified SiC layers

被引：3

作者：

Neuhauser, J ^{[1
]}

Treffer, G ^{[1
]}

Planitz, H ^{[1
]}

Wagner, W ^{[1
]}

Marx, G ^{[1
]}

机构：

[1] TECH UNIV CHEMNITZ ZWICKAU,DEPT CHEM,D-09107 CHEMNITZ,GERMANY

来源：

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1997年 / 358卷 / 1-2期

关键词：

Titanium; Carbide; Chemical Vapor Deposition; Incidence Angle; Silicon Carbide;

D O I：

10.1007/s002160050421

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Thin films of silicon carbide with codeposited elemental silicon were prepared by chemical vapor deposition (CVD). In a second CVD-process a thin titanium layer was deposited on the SiC(Si) basic layer. The solid state reaction between titanium and the codeposited silicon can be observed by X-ray diffractometry. A helpful analytical method for the observation of the growth of the reaction products is grazing incidence X-ray diffractometry. Various diffraction patterns of titanium silicides can be obtained by decreasing incidence angles.

引用

页码：333 / 334

页数：2

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