Observation of Negative Differential Conductance in a Reverse-Biased Ni/Ge Schottky Diode

被引：5
|
作者：
Husain, Muhammad Khaled [1 ]
Li, Xiaoli V. [1 ]
de Groot, Cornelis H. [1 ]
机构：
[1] Univ Southampton, Nano Res Grp, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 09期
关键词：
Electrodeposition; germanium; Gunn diode; Schottky barrier (SB); transferred-electron effect; RESISTANCE; GERMANIUM; ELECTRONS; VELOCITY; FETS;
D O I：
10.1109/LED.2009.2025673
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report the experimental observation of negative differential conductance (NDC) in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation, we show that, at reverse bias, electrons tunnel into the high electric field of the depletion region. This scatters the electrons into the upper valley of the Ge conduction band, which has a lower mobility. The observed NDC is hence attributed to the transferred-electron effect. This shows that Schottky contacts can be used to create hot electrons for transferred-electron devices.
引用
收藏
页码：966 / 968
页数：3
相关论文
共 50 条
  • [41] Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method
    Pan, Shijie
    Feng, Shiwei
    Li, Xuan
    Bai, Kun
    Lu, Xiaozhuang
    Li, Yanjie
    Zhang, Yamin
    Zhou, Lixing
    Zhang, Meng
    APPLIED PHYSICS LETTERS, 2022, 121 (15)
  • [42] Significant reduction of leakage currents in reverse-biased Ge n+/p junctions by taking care of peripheral passivation layer
    Liu, Chi
    Ikegaya, Hiroki
    Nishimura, Tomonori
    Toriumi, Akira
    HIGH PURITY AND HIGH MOBILITY SEMICONDUCTORS 14, 2016, 75 (04): : 227 - 235
  • [43] Reverse biased Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors
    Yu, J.
    Ippolito, S. J.
    Shafiei, M.
    Dhawan, D.
    Wlodarski, W.
    Kalantar-zadeh, K.
    APPLIED PHYSICS LETTERS, 2009, 94 (01)
  • [44] Calculation of the resorption time of the accumulated charge of a p-i-n diode when it is switched from the forward to the reverse-biased state
    Abramov, A.A.
    Gorbatyy, I.N.
    Tkachev, V.A.
    Soviet journal of communications technology & electronics, 1988, 33 (02): : 164 - 171
  • [45] Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode
    P. A. Ivanov
    A. S. Potapov
    I. V. Grekhov
    Technical Physics, 2018, 63 : 928 - 931
  • [46] Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon
    Banihashemian, Seyedeh Maryam
    Hajghassem, Hassan
    Erfanian, Alireza
    Aliahmadi, Majidreza
    Mohtashamifar, Mansor
    Mosakazemi, Seyed Mohamadhosein
    SENSORS, 2010, 10 (02) : 1012 - 1020
  • [47] Observation of Negative Differential Capacitance (NDC) in Ti Schottky diodes on SiGe islands
    Rangel-Kuoppa, Victor-Tapio
    Tonkikh, Alexander
    Zakharov, Nikolay
    Werner, Peter
    Jantsch, Wolfgang
    PHYSICS OF SEMICONDUCTORS, 2013, 1566 : 373 - +
  • [48] Electroluminescence from aluminum-porous silicon reverse-biased Schottky diodes formed on the base of highly doped n-type polysilicon
    Lazarouk, S
    Bondarenko, V
    LaMonica, S
    Maiello, G
    Masini, G
    Pershukevich, P
    Ferrari, A
    THIN SOLID FILMS, 1996, 276 (1-2) : 296 - 298
  • [49] INFLUENCE OF STATE OF SURFACE ON CONDITIONS OF APPEARANCE OF A NEGATIVE DIFFERENTIAL CONDUCTANCE OF SURFACE CHANNELS ON N-TYPE GE-NI
    KALVENAS, SP
    MIKHALYAK, MM
    PUCHINSKAS, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (01): : 113 - 114
  • [50] Effects of Ta-oxide interlayer on the Schottky barrier parameters of Ni/n-type Ge Schottky barrier diode
    Lee, Hoon-Ki
    Jyothi, I.
    Janardhanam, V.
    Shim, Kyu-Hwan
    Yun, Hyung-Joong
    Lee, Sung-Nam
    Hong, Hyobong
    Jeong, Jae-Chan
    Choi, Chel-Jong
    MICROELECTRONIC ENGINEERING, 2016, 163 : 26 - 31
12345