Observation of Negative Differential Conductance in a Reverse-Biased Ni/Ge Schottky Diode

被引：5
|
作者：
Husain, Muhammad Khaled [1 ]
Li, Xiaoli V. [1 ]
de Groot, Cornelis H. [1 ]
机构：
[1] Univ Southampton, Nano Res Grp, Sch Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 09期
关键词：
Electrodeposition; germanium; Gunn diode; Schottky barrier (SB); transferred-electron effect; RESISTANCE; GERMANIUM; ELECTRONS; VELOCITY; FETS;
D O I：
10.1109/LED.2009.2025673
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report the experimental observation of negative differential conductance (NDC) in a Ni/Ge Schottky diode. With the aid of theoretical models and numerical simulation, we show that, at reverse bias, electrons tunnel into the high electric field of the depletion region. This scatters the electrons into the upper valley of the Ge conduction band, which has a lower mobility. The observed NDC is hence attributed to the transferred-electron effect. This shows that Schottky contacts can be used to create hot electrons for transferred-electron devices.
引用
收藏
页码：966 / 968
页数：3
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