Room-temperature pulsed operation of 1.3 mu m GaInNAs/GaAs laser diode

被引：105
|
作者：
Sato, S
Osawa, Y
Saitoh, T
Fujimura, I
机构：
[1] Gen. Electronics R. and D. Center, Ricoh Co., Ltd., 5-10 Yokata-kami, Takadate, Natori
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 16期
关键词：
semiconductor junction lasers; chemical vapour deposition;
D O I：
10.1049/el:19970935
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A lattice-matched GaInNAs/GaAs double-heterostructure laser diode has been developed by metal organic chemical vapour deposition using dimethylhydrazine as a nitrogen source. Lasing at 1.3 mu m at room-temperature under pulsed operation is demonstrated.
引用
收藏
页码：1386 / 1387
页数：2
相关论文
共 50 条
  • [41] Room-temperature diode laser photoacoustic spectroscopy near 2.3 μm
    Civis, S
    Horká, V
    Cihelka, J
    Simecek, T
    Hulicius, E
    Oswald, J
    Pangrác, J
    Vicet, A
    Rouillard, Y
    Salhi, A
    Alibert, C
    Werner, R
    Koeth, J
    APPLIED PHYSICS B-LASERS AND OPTICS, 2005, 81 (06): : 857 - 861
  • [42] Room-temperature diode laser photoacoustic spectroscopy near 2.3 μm
    S. Civiš
    V. Horká
    J. Cihelka
    T. Šimeček
    E. Hulicius
    J. Oswald
    J. Pangrác
    A. Vicet
    Y. Rouillard
    A. Salhi
    C. Alibert
    R. Werner
    J. Koeth
    Applied Physics B, 2005, 81 : 857 - 861
  • [43] A 1.3-μm GaInNAs laser diode with a lifetime of over 1000 hours
    Kondow, M
    Kitatani, T
    Nakahara, K
    Tanaka, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (12A): : L1355 - L1356
  • [44] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS/GAAS SURFACE EMITTING JUNCTION LASER
    IGA, K
    ISHIKAWA, S
    OHKOUCHI, S
    NISHIMURA, T
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) : 663 - 668
  • [45] ROOM-TEMPERATURE OPERATION OF A DIODE-PUMPED YAG-ND LASER
    ALLEN, RB
    DIERSCHK.EG
    GILBERT, BC
    HAISTY, RW
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1971, QE 7 (06) : 300 - &
  • [46] 0. 67 mu m ROOM-TEMPERATURE OPERATION OF GaInAsP/AlGaAs LASERS ON GaAs PREPARED BY LPE.
    Kishino, Katsumi
    Koizumi, Yoshihiro
    Yokochi, Akira
    Kinoshita, Susumu
    Tako, Toshiharu
    Japanese Journal of Applied Physics, Part 2: Letters, 1984, 23 (9 pt 2): : 740 - 742
  • [47] ROOM-TEMPERATURE CW OPERATION OF GAAS1-XPX DIODE-PUMPED YAG-ND LASER
    OSTERMAY.FW
    ALLEN, RB
    DIERSCHK.EG
    APPLIED PHYSICS LETTERS, 1971, 19 (08) : 289 - &
  • [48] ROOM-TEMPERATURE CW OPERATION OF GAINASP-INP DH LASER EMITTING AT 1.51 MU-M
    ARAI, S
    ASADA, M
    SUEMATSU, Y
    ITAYA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (12) : 2333 - 2334
  • [49] STABLE CW OPERATION OF A MQW LASER EMITTING AT 1.54-MU-M ON A SI SUBSTRATE AT ROOM-TEMPERATURE
    SUGO, M
    MORI, H
    ITOH, Y
    SAKAI, Y
    TACHIKAWA, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2692 - 2692
  • [50] 0.66 MU-M ROOM-TEMPERATURE OPERATION OF INGAAIP DH LASER-DIODES GROWN BY MBE
    KAWAMURA, Y
    ASAHI, H
    NAGAI, H
    IKEGAMI, T
    ELECTRONICS LETTERS, 1983, 19 (05) : 163 - 165
12345