Room-temperature pulsed operation of 1.3 mu m GaInNAs/GaAs laser diode

被引：105
|
作者：
Sato, S
Osawa, Y
Saitoh, T
Fujimura, I
机构：
[1] Gen. Electronics R. and D. Center, Ricoh Co., Ltd., 5-10 Yokata-kami, Takadate, Natori
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 16期
关键词：
semiconductor junction lasers; chemical vapour deposition;
D O I：
10.1049/el:19970935
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A lattice-matched GaInNAs/GaAs double-heterostructure laser diode has been developed by metal organic chemical vapour deposition using dimethylhydrazine as a nitrogen source. Lasing at 1.3 mu m at room-temperature under pulsed operation is demonstrated.
引用
收藏
页码：1386 / 1387
页数：2
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