1.57-μm InP-based resonant-cavity-enhanced photodetector with InP/air-gap Bragg reflectors

被引：3
|
作者：
Ren, XM [1 ]
Huang, H [1 ]
Chong, YZ [1 ]
Huang, YQ [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, Beijing 100876, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2004年 / 42卷 / 02期
关键词：
long wavelength; InP/air gap; Bragg reflector; resonant cavity; photodetector;
D O I：
10.1002/mop.20230
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have demonstrated a monolithic and cost-effective InP-based resonant-cavity-enhanced photodetector with an InP/air-gap distributed Bragg reflector (DBR) fabricated by using selective wet etching. Peak quantum efficiency is 54% at 1.57 mum, which corresponds to nearly two-fold enhancement versus a conventional detector of the same absorption depth, a 3-dB bandwidth of 6.8 GHz was achieved with the active area of 50 X 50 mum(2). (C) 2004 Wiley Periodicals, Inc.
引用
收藏
页码：133 / 135
页数：3
相关论文
共 50 条
  • [31] 1.3 and 1.5 μm InP-based vertical cavity surface emitting lasers
    Nishiyama, N
    Caneau, C
    Zah, CE
    2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2004, : 402 - 403
  • [32] 1.55 μm m InP-based Short-Cavity-VCSELs with Enhanced Modulation-Bandwidth of 15 GHz
    Mueller, M.
    Hofmann, W.
    Boehm, G.
    Rosskopf, J.
    Roenneberg, E.
    Ortsiefer, M.
    Amann, M. C.
    2009 35TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC), 2009,
  • [33] Photodiode with resonant cavity based on InGaAs/InP for 1.9 μm band
    Zynek, J
    Jasik, A
    Strupinski, W
    Rutkowski, J
    Jagoda, A
    Przyborowska, K
    Jakiela, R
    Piersa, M
    Wnuk, A
    OPTO-ELECTRONICS REVIEW, 2004, 12 (01) : 149 - 155
  • [34] 1.55 μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs -: art. no. 111105
    Han, Q
    Yang, XH
    Niu, ZC
    Ni, HQ
    Xu, YQ
    Zhang, SY
    Du, Y
    Peng, LH
    Zhao, H
    Tong, CZ
    Wu, RH
    Wang, QM
    APPLIED PHYSICS LETTERS, 2005, 87 (11)
  • [35] AlGaN-based resonant-cavity-enhanced p-i-n ultraviolet photodetector
    Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
    不详
    Pan Tao Ti Hsueh Pao, 2007, 12 (1957-1960):
  • [36] Wide continuous tuning range of 221 nm by InP/air-gap vertical-cavity filters
    Hasse, A.
    Irmer, S.
    Daleiden, J.
    Dharmarasu, N.
    Hansmann, S.
    Hillmer, H.
    ELECTRONICS LETTERS, 2006, 42 (17) : 974 - 975
  • [37] Room-temperature pulsed operation of 1.5-mu m vertical cavity lasers with an InP-based Bragg reflector
    Streubel, K
    Rapp, S
    Andre, J
    Wallin, J
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (09) : 1121 - 1123
  • [38] High-performance 1.55 μm low-temperature-grown GaAs resonant-cavity-enhanced photodetector
    Han, Q.
    Niu, Z. C.
    Peng, L. H.
    Ni, H. Q.
    Yang, X. H.
    Du, Y.
    Zhao, H.
    Wu, R. H.
    Wang, Q. M.
    APPLIED PHYSICS LETTERS, 2006, 89 (13)
  • [39] INP/INGAAS RESONANT-CAVITY ENHANCED PHOTODETECTOR AND LIGHT-EMITTING DIODE WITH EXTERNAL MIRRORS ON SI
    SALVADOR, A
    HUANG, F
    SVERDLOV, B
    BOTCHKAREV, AE
    MORKOC, H
    ELECTRONICS LETTERS, 1994, 30 (18) : 1527 - 1529
  • [40] In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors
    Hoffman, RW
    Murphy, M
    Cruel, J
    Belousov, M
    Volf, B
    Murray, C
    Armour, EA
    JOURNAL OF CRYSTAL GROWTH, 2004, 261 (2-3) : 301 - 308
12345