1.57-μm InP-based resonant-cavity-enhanced photodetector with InP/air-gap Bragg reflectors

被引：3
|
作者：
Ren, XM [1 ]
Huang, H [1 ]
Chong, YZ [1 ]
Huang, YQ [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, Beijing 100876, Peoples R China
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2004年 / 42卷 / 02期
关键词：
long wavelength; InP/air gap; Bragg reflector; resonant cavity; photodetector;
D O I：
10.1002/mop.20230
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have demonstrated a monolithic and cost-effective InP-based resonant-cavity-enhanced photodetector with an InP/air-gap distributed Bragg reflector (DBR) fabricated by using selective wet etching. Peak quantum efficiency is 54% at 1.57 mum, which corresponds to nearly two-fold enhancement versus a conventional detector of the same absorption depth, a 3-dB bandwidth of 6.8 GHz was achieved with the active area of 50 X 50 mum(2). (C) 2004 Wiley Periodicals, Inc.
引用
收藏
页码：133 / 135
页数：3
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