共 50 条
- [41] Investigation of the electronic structure of the UD-4 defect in 4H-SiC by optical techniques Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 461 - 464
- [42] Divacancy model for P6/P7 centers in 4H-and 6H-SiC SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 527 - 530
- [45] Theoretical calculation of the electron Hall mobility in n-type 4H-and 6H-SiC SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 729 - 732
- [46] The formation of new periodicities after N-implantation in 4H-and 6H-SiC samples SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 447 - +
- [49] 4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1215 - 1218
- [50] Bandstructure and transport properties of 4H-and 6H-SiC:: Optically detected cyclotron resonance investigations SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 559 - 562